Structural, optical, and electronic properties of Mg Zn1-O (0 ≤ x ≤ 0.38) films pseudomorphically grown on Zn-polar ZnO substrates

ZnO is a typical oxide semiconductor with a wide direct band gap of 3.37 eV and offers a variety of possibilities for optical and electronic applications. Alloying with Mg into the Zn site increases the band gap, enabling band engineering. In this study, we have performed comprehensive characterizations of Mg x Zn 1- x O thin films grown on Zn-polar ZnO substrates, which are of particular importance because of the excellent quality compared with those grown on other substrates such as Al 2 O 3 . We have obtained Mg content dependence of optical constants, two-dimensional carrier density, and valence band and core-level energies. These results indicate that, while the optical property is determined solely by the Mg content in the bulk, local structure, and Mg distribution can have a significant influence on the interface and surface properties.

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Publication Details

Journal
Materials Today Quantum
Published
2025-04-06
DOI
https://doi.org/10.1016/j.mtquan.2025.100036
Citations
1
Primary Topic
ZnO doping and properties
Type
article
Field-Weighted Citation Impact
0.52
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article

Structural, optical, and electronic properties of Mg Zn1-O (0 ≤ x ≤ 0.38) films pseudomorphically grown on Zn-polar ZnO substrates

Jun Uzuhashi, Koichiro Yaji, Atsushi Tsukazaki, M. Kawasaki et al.
1 citations
Materials Today Quantum
ZnO doping and properties
0.52
article

Structural, optical, and electronic properties of Mg Zn1-O (0 ≤ x ≤ 0.38) films pseudomorphically grown on Zn-polar ZnO substrates

Jun Uzuhashi, Koichiro Yaji, Atsushi Tsukazaki, M. Kawasaki, Yusuke Kozuka, S. Tsuda, Takanobu Hiroto, Tadakatsu Ohkubo, T. Makino, Thang Dinh Phan, Joseph Falson
article en
1 citations

Abstract

ZnO is a typical oxide semiconductor with a wide direct band gap of 3.37 eV and offers a variety of possibilities for optical and electronic applications. Alloying with Mg into the Zn site increases the band gap, enabling band engineering. In this study, we have performed comprehensive characterizations of Mg x Zn 1- x O thin films grown on Zn-polar ZnO substrates, which are of particular importance because of the excellent quality compared with those grown on other substrates such as Al 2 O 3 . We have obtained Mg content dependence of optical constants, two-dimensional carrier density, and valence band and core-level energies. These results indicate that, while the optical property is determined solely by the Mg content in the bulk, local structure, and Mg distribution can have a significant influence on the interface and surface properties.

Materials Today QuantumVol. 6
University of Fukui (JP), Tohoku University (JP), National Institute for Materials Science (JP), RIKEN Center for Emergent Matter Science (JP), The University of Tokyo (JP)
Openalex Percentile: Top 40%
ZnO doping and properties
0.52
DOIOpen Access PDFOpenAlex
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