Growth of hexagonal BN crystals by traveling-solvent floating zone

Large, high-purity single-crystals of hexagonal BN (h-BN) are essential for exploiting its many desirable and interesting properties. Here, we demonstrate via X-ray tomography , X-ray diffraction and scanning electron microscopy that h-BN crystals can be grown by traveling-solvent floating-zone (TSFZ). The diameters of grown boules range from 3 – 5 mm with lengths from 2 – 10 mm. Tomography indicates variable grain sizes within the boules , with the largest having areas of ≈ 1 mm × 2 mm and thickness ≈ 0.5 mm. Although the boules contain macroscale flux inclusions, the h-BN lattice itself is of high quality for samples grown under optimized conditions. The currently optimized growth procedure employs an Fe flux, moderate N 2 pressure ( P N 2 ≈ 6 bar), and a growth rate of 0.1 mm/h. Raman spectroscopy for an optimized sample gives an average linewidth of 7.7(2) cm −1 for the E 2g intralayer mode at 1365.46(4) cm −1 and 1.0(1) cm −1 for the E 2g interlayer shear mode at 51.78(9) cm −1 . The corresponding photoluminescence spectrum shows sharp phonon-assisted free exciton peaks and minimal signal in the energy range corresponding to carbon-related defects ( E = 3.9 – 4.1 eV). Our work demonstrates the viability of growing h-BN by the TSFZ technique, thereby opening a new route towards larger, high-quality crystals and advancing the state of h-BN related research. • Hexagonal boron nitride crystals can be grown by traveling-solvent floating-zone. • Using an Fe flux, moderate N 2 pressure and a slow growth rate yields optimal crystals. • These crystals show sharp Raman peaks and phonon-assisted free exciton photoluminescence .