Pulsed laser deposited Ti-doped ZnO nanowires for photodetector application

This work investigates the Photodetector performance of titanium (Ti)-doped zinc oxide (ZnO) nanowires (NWs) fabricated on silicon (Si) substrates using the pulsed laser deposition (PLD) technique. Detailed morphological characterization via field emission gun scanning electron microscopy (FEG-SEM) confirmed the growth and high aspect ratio of the Ti-doped ZnO NWs. Absorption spectroscopy revealed significant ultraviolet (UV) light absorption, with a bandgap energy of 3.21 eV, indicating efficient electronic transitions and potential photocatalytic enhancement. Finally, the current-voltage (I-V) measurements, conducted under dark conditions and illumination with various wavelengths (370 nm, 380 nm, and 390 nm), demonstrated a pronounced photocurrent enhancement upon UV exposure. The Ti-doped ZnO NWs exhibited strong wavelength-dependent photoconductive behavior at ‒1 V, emphasizing their high sensitivity and versatility for UV photodetection. The photocurrent measurements under 380 nm illumination and at ‒1 V showed a rapid rise time of 0.43 s and a fall time of 0.42 s, highlighting the material’s exceptional response and recovery dynamics. Furthermore, the stability and sensitivity of the Ti-doped ZnO NWs under varying light intensities were validated through time-dependent current analysis, with distinct transitions marking their robust light-sensing capabilities. These findings underscore the potential of Ti-doped ZnO NWs for high-performance Photodetector, combining fast response times, reliable sensitivity, and adaptability for advanced optoelectronic applications. This work demonstrates the promise of Ti-doped ZnO NWs as efficient candidates for next-generation light-sensing technologies.