A K-Band Gilbert-Cell Mixer with Transformer-Enhanced Transconductance,45nm Band-Pass Filtered Switching, and low-Pass Load Conversion in 22nm FDSOI CMOS

Abstract: This paper presents "A K-Band Gilbert-Cell Mixer with Transformer-Enhanced Transconductance,45nmBand-Pass Filtered Switching, and low-Pass Load Conversion in 22nm FDSOI CMOS" presents a low-power K-band down-conversion mixer designed using 22nm FDSOI CMOS technology. The mixer adopts a modified Gilbert-cell architecture, replacing the active transconductance stage with a passive transformer to overcome voltage headroom limitations in advanced CMOS processes. Additionally, an extension band pass filter is incorporated into the switching stage to suppress harmonics, noise, and spurious signals, ensuring a cleaner intermediate frequency (IF) output. Further, a filter in the load conversion stage refines the final IF signal by minimizing unwanted frequency components and improving signal integrity. The design achieves a conversion gain of 9.03dB, an input 1dB compression point of -7dBm, while consuming just 0.799mW from a 0.8V supply. Its compact size of 0.54×0.45mm², combined with high linearity and low power consumption, makes it ideal for applications like 5G transceivers and short-range radar systems. This project highlights the advantages of 22nm FDSOI technology in developing energyefficient, high-frequency RF circuits.