A method to generate additional volatile states using single-domain ferroelectric field-effect transistor

In this paper, we have proposed a novel technique to generate the additional volatile states using an ultra-scaled 12 nm technology node fully depleted silicon on insulator Ferroelectric field-effect transistor (FeFET). The proposed method is applicable to all the existing single-bit non-volatile ferroelectric technologies without having any impact on the reliability of the device. Additionally, this method works with single as well as multi-domain ferroelectric films. The approach shows stability in all the states with variations in channel length, non-ferroelectric phase, and ferroelectric parameters. In addition, the states are independent of the memory window of the device and can work with thin ferroelectric films with a hysteresis loop. The proposed approach is voltage-controlled and does not require any physical changes in the single-bit non-volatile FeFET to generate the additional volatile states.