IO/IGZO heterojunction artificial synaptic transistors gated by LiZrO solid electrolyte for multifunctional neuromorphic applications
Abstract In recent years, artificial synaptic devices have been developed, with synaptic transistors gated by solid-state electrolytes offering superior stability compared to other devices. This study employed an IO/IGZO heterojunction synaptic transistor gated with LiZrO solid-state electrolyte. The heterojunction improves device mobility and ensures performance stability. A series of biological synaptic calculations are achieved through bilayer formation and electrochemical doping, including the implementation of excitatory postsynaptic currents and paired-pulse promotion under electrical and light stimuli. The visual afterimages phenomenon of the human eye is simulated using light pulses, offering insights into the implementation of visual sensory processing and parallel computation. The artificial neural network constructed in this study can achieve a recognition rate of 94.9%–97.3% on the handwritten digit dataset.
Authors
- Guorui Yin (ORCID: https://orcid.org/0000-0002-1969-0078)
- Jie Su (ORCID: https://orcid.org/0000-0001-7063-3100)
- Wenshuo Wu
- Hao Liu (ORCID: https://orcid.org/0000-0003-0266-9472)
- Yan Wang (ORCID: https://orcid.org/0009-0008-1871-7321)
- Minghao Zhang (ORCID: https://orcid.org/0000-0001-9488-4959)
Institutions
- Qingdao University (CN)
- Qilu Hospital of Shandong University (CN)
- Dezhou University (CN)
- Nanjing University (CN)
Publication Details
- Journal
- Nanotechnology
- Published
- 2025-04-04
- DOI
- https://doi.org/10.1088/1361-6528/adc607
- Citations
- 2
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Shandong Province
- National Laboratory of Solid State Microstructures, Nanjing University