High-efficiency cadmium-free Cu(In,Ga)Se2 flexible thin-film solar cells on ultra-thin glass as an emerging substrate
Cu(In,Ga)Se 2 (CIGSe) solar cells have significantly progressed in associated flexible photovoltaic technologies. Recently, ultra-thin glass (UTG) has been recognized as an emerging novel flexible substrate that is compatible with conventional thick glass-based methodology. In this work, the flexible CIGSe solar cell on UTG using a well-known three-stage process yielded 18.1 % with CdS buffer, which is higher than that of conventional solar cells on thick glass. However, UTG becomes brittle at high temperatures (>600 °C) due to thermal reorganization of potassium. To address the issue, a thin Ag precursor layer was introduced, enabling effective grain growth at reduced temperatures (<500 °C). Optimized Ag alloying (∼1 at%) enhanced grain structure and device efficiency, reaching up to 17.45 % at lower temperatures. Additionally, (Zn,Mg)O as a cadmium-free buffer was explored to address environmental concerns. With the inclusion of an intrinsic zinc oxide (i-ZnO) layer, the CIGSe/(Zn,Mg)O heterojunction was protected from transparent conductive oxide (TCO) sputtering damage, showing increased open circuit voltage and efficiency. Overall, we have successfully demonstrated a flexible and environmentally friendly cadmium-free CIGSe solar cell with an efficiency of approximately 17.81 %. Moreover, scaling up the fabrication process for a large-area cell with 60 cm² achieved a device efficiency of 10.11 % with a lamination process. This study advances the potential of high-efficiency CIGSe solar cells on flexible UTG substrates for various practical applications, including building integration on curved surfaces, portable devices, and automobiles. • Demonstrated flexible, Cd‐free Cu(In,Ga)Se₂ solar cells on emerging ultrathin glass substrates. • Achieved a record efficiency of 17.81 % for flexible, Cd‐free Cu(In,Ga)Se₂ solar cells on ultrathin glass substrates. • Achieved an efficiency of 10.11 % for 60 cm² large-area Cd-free CIGSe cells. • Established a platform for controlling microstructure and defect properties through low-melting-point Ag doping.
Authors
- Awet Mana Amare (ORCID: https://orcid.org/0000-0001-7163-5992)
- Jin Gi An
- Soomin Song
- Jihye Gwak (ORCID: https://orcid.org/0000-0002-7379-4142)
- Muhammad Rehan (ORCID: https://orcid.org/0000-0002-0969-1341)
- Seung Kyu Ahn (ORCID: https://orcid.org/0000-0003-2914-6030)
- Inchan Hwang (ORCID: https://orcid.org/0009-0000-3634-804X)
- Hyun-wook Park
- Young‐Joo Eo (ORCID: https://orcid.org/0000-0002-5647-7452)
- Inyoung Jeong (ORCID: https://orcid.org/0000-0003-4236-2918)
- Donghyeop Shin (ORCID: https://orcid.org/0000-0003-0103-0458)
- Joo Hyung Park (ORCID: https://orcid.org/0000-0002-3795-2836)
- Kihwan Kim (ORCID: https://orcid.org/0000-0001-8544-4310)
- Ara Cho (ORCID: https://orcid.org/0000-0002-7307-8795)
- Se Jin Ahn (ORCID: https://orcid.org/0000-0002-5059-0112)
- Jun-Sik Cho
- Jae Ho Yun
Institutions
- Korea Energy Economics Institute (KR)
- Korea Institute of Energy Research (KR)
Publication Details
- Journal
- Journal of Alloys and Compounds
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1016/j.jallcom.2025.180187
- Citations
- 5
- Primary Topic
- Chalcogenide Semiconductor Thin Films
- Type
- article
- Field-Weighted Citation Impact
- 3.65