Side-chain modification to boost the dielectric constant of polymers: toward high-k material synthesis and application in low-voltage operating printed electronics

Dipole-inducing side chains in amorphous polymers boost dielectric constants above 6 while preserving good insulation, enabling 3 V operating organic transistors with high mobility (∼1.90 cm² V −1 s −1 ) and operation stability.

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Publication Details

Journal
Journal of Materials Chemistry A
Published
2025-01-01
DOI
https://doi.org/10.1039/d4ta09088h
Citations
4
Primary Topic
Copper Interconnects and Reliability
Type
article
Field-Weighted Citation Impact
1.71
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article

Side-chain modification to boost the dielectric constant of polymers: toward high-k material synthesis and application in low-voltage operating printed electronics

Yechan Lee, Xiaowu Tang, Tae Kyu An, Hyeok‐jin Kwon et al.
4 citations
Journal of Materials Chemistry A
Copper Interconnects and Reliability
1.71
article

Side-chain modification to boost the dielectric constant of polymers: toward high-k material synthesis and application in low-voltage operating printed electronics

Yechan Lee, Xiaowu Tang, Tae Kyu An, Hyeok‐jin Kwon, Yohan Jo, Ji‐Hoon Lee, Seonghyeon Kim, Se Hyun Kim
article en
4 citations

Abstract

Dipole-inducing side chains in amorphous polymers boost dielectric constants above 6 while preserving good insulation, enabling 3 V operating organic transistors with high mobility (∼1.90 cm² V −1 s −1 ) and operation stability.

Journal of Materials Chemistry AVol. 13(17)
Korea National University of Transportation (KR), Zhengzhou University of Light Industry (CN), Konkuk University (KR), Pukyong National University (KR)
Openalex Percentile: Top 16%
Copper Interconnects and Reliability
1.71
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Side-chain modification to boost the dielectric constant of polymers: toward high-k material synthesis and application in low-voltage operating printed electronics — Yechan Lee, Xiaowu Tang, et al. · Journal of Materials Chemistry A (2025) | TGRS Research Map | TGRS