Phase transitions of β-ZnTe(en)0.5 under hydrostatic pressure

Organic–inorganic hybrid semiconductors have enhanced and distinctive material properties. β-ZnTe(en)0.5, which consists of alternating layers of two-monolayer-thick zinc telluride (ZnTe) and ethylenediamine (en), exhibits high crystallinity, stability, and tunable optical properties. Using x-ray diffraction (XRD) and Fourier transform infrared spectroscopy, this study investigated the structural response of β-ZnTe(en)0.5 to applied hydrostatic pressure. Pressure-induced phase transitions were observed at 2.1 and 3.3 GPa. Shifts in the XRD peaks indicate substantial anisotropy in the pressure response, with the layer stacking direction (b axis) exhibiting high compressibility. The a and b lattice parameters showed −0.55% strain/GPa and −2.26% strain/GPa, respectively, contradicting theoretical calculations that predicted a more isotropic response. IR spectroscopy revealed abrupt changes in NH2 and CH2 vibrational modes corresponding to the phase transitions.

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Publication Details

Journal
AIP Advances
Published
2025-04-01
DOI
https://doi.org/10.1063/5.0266352
Primary Topic
Chalcogenide Semiconductor Thin Films
Type
article
Field-Weighted Citation Impact
0.00

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article

Phase transitions of β-ZnTe(en)0.5 under hydrostatic pressure

Thomas A. Schmedake, Matthew D. McCluskey, Jill C. Miller, Yong Zhang et al.
AIP Advances
Chalcogenide Semiconductor Thin Films
article

Phase transitions of β-ZnTe(en)0.5 under hydrostatic pressure

Thomas A. Schmedake, Matthew D. McCluskey, Jill C. Miller, Yong Zhang, Yizhou Wang
article en

Abstract

Organic–inorganic hybrid semiconductors have enhanced and distinctive material properties. β-ZnTe(en)0.5, which consists of alternating layers of two-monolayer-thick zinc telluride (ZnTe) and ethylenediamine (en), exhibits high crystallinity, stability, and tunable optical properties. Using x-ray diffraction (XRD) and Fourier transform infrared spectroscopy, this study investigated the structural response of β-ZnTe(en)0.5 to applied hydrostatic pressure. Pressure-induced phase transitions were observed at 2.1 and 3.3 GPa. Shifts in the XRD peaks indicate substantial anisotropy in the pressure response, with the layer stacking direction (b axis) exhibiting high compressibility. The a and b lattice parameters showed −0.55% strain/GPa and −2.26% strain/GPa, respectively, contradicting theoretical calculations that predicted a more isotropic response. IR spectroscopy revealed abrupt changes in NH2 and CH2 vibrational modes corresponding to the phase transitions.

AIP AdvancesVol. 15(4)
University of North Carolina at Charlotte (US), Washington State University (US)
Basic Energy Sciences, Army Research Office
Openalex Percentile: Top 95%
Chalcogenide Semiconductor Thin Films
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Phase transitions of β-ZnTe(en)0.5 under hydrostatic pressure — Thomas A. Schmedake, Matthew D. McCluskey, et al. · AIP Advances (2025) | TGRS Research Map | TGRS