Towards monolithic integration of polymer-based electro-optical devices in silicon photonic integrated circuits using a 250nm SOI technology

Silicon-based photonic integrated circuits (PIC) in a complementary metal-oxide semiconductor (CMOS) technology are essential for next-generation communication systems and neuromorphic computing. Silicon lacks from efficient electro-optical (EO) effects. Since silicon is limiting the performance of current photonic devices, more advanced materials like nonlinear optical polymers are needed to unleash the full potential of PICs. As preliminary proof of concept we demonstrate the quadratic EO and electric field-induced EO effect by employing a Mach-Zehnder interferometer. Following our monolithic integration concept could open a way for next-generation PICs.