Trap-loss fluorescence spectroscopy of Cs MOT with 319-nm single-step Rydberg excitation and application to measurement of the background electric field
A straightforward way for measurement and compensation of the background electric field in the vicinity of cold atoms has been demonstrated and presented by using of the Trap-Loss Fluorescence Spectroscopy(TLFS) of cesium(Cs) magneto-optical trap(MOT) due to 319-nm single-step Rydberg excitation. In our experiment, TLFS of Cs MOT is induced by 319-nm single-step excitation to nP_3/2 Rydberg states of cold Cs atoms confined in a MOT utilizing a 319-nm ultra-violet(UV) single-frequency laser beam. Rydberg TLFS only needs the trap-loss fluorescence photons detection by using of a CCD camera or a calibrated photodiode, in stead of field-ionization of Rydberg atoms and ions detection, thus can offers a simple but efficient alternative way. Utilizing Rydberg TLFS of Cs MOT, strength of the background electric field in the vicinity of cold Cs aoms is obtained by measuring Stark shift. Typical background electric field strength of 218.9±7.5 mV/cm is measured. The minimum measurable electric field is approximately 10.8 mV/cm. Furthermore, partial compensation has been performed via the parallel electrode plates positioned outside the ultra-high vacuum glass cell of Cs MOT.
Authors
- Y.-R. Wang
- Yingying Wei (ORCID: https://orcid.org/0000-0003-3826-336X)
- Wenjing Su (ORCID: https://orcid.org/0000-0002-8238-3118)
- Xiaokai Hou
- Junmin Wang (ORCID: https://orcid.org/0000-0002-3530-8529)
- Jun He (ORCID: https://orcid.org/0000-0002-8127-6740)
Institutions
- Shanxi University (CN)
- State Key Laboratory of Quantum Optics and Quantum Optics Devices
Publication Details
- Published
- 2025-04-04
- DOI
- https://doi.org/10.1117/12.3056090
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00