The Effect of Resonant Tunneling on Random Telegraph Noise in the Cryogenic Regime

Bringing the classical electronics control interface close to the qubits at deep-cryogenic temperatures is crucial for scaling up quantum computers. To this end, a reliable, low-noise operation of the employed technologies is required. Resonant tunneling through parasitic quantum dots (QDs) at cryogenic temperatures is known to alter the transfer characteristics of transistors, leading to bias intervals with negative transconductance. In our work we show that random telegraph noise (RTN) in the presence of a QD can be described using nonradiative multiphonon (NMP) theory. Contrary to previous studies, the charge transition rates of the RTN remain unaffected by the resonant tunneling, suggesting that the studied defect lies outside the QD. The corresponding drain current amplitudes are however highly sensitive to the device electrostatics and therefore are affected by the resonant regime.