Detection of Proton Irradiation Damage in 4H-SiC Schottky Diodes via Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance
We utilize electrically detected magnetic resonance and near-zero-field magnetoresistance to identify the physical and chemical nature of atomic scale defects generated by proton bombardment of $4 \mathrm{H}-\mathrm{SiC}$ Schottky diodes.
Authors
- David J. Spry
- Joshua Young (ORCID: https://orcid.org/0000-0002-8499-0368)
- Edward S. Bielejec (ORCID: https://orcid.org/0000-0002-3386-5161)
- Patrick M. Lenahan (ORCID: https://orcid.org/0000-0001-9759-1027)
- Dustin T. Hassenmayer
Institutions
- Pennsylvania State University (US)
- Glenn Research Center (US)
- Sandia National Laboratories (US)
Publication Details
- Published
- 2024-10-06
- DOI
- https://doi.org/10.1109/iirw62856.2024.10947146
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- National Nuclear Security Administration
- Air Force Office of Scientific Research