A predictive method for the degradation of a charge storage memory on a dedicated 4kb test vehicle
Through a 4 kb charge storage memory array, HCI degradation variability for a dedicate wafer split process has been investigated. After a classical experimental set of measurement to enable memory cells degradation, a statistical analysis method has been implemented to predict cells failure before reliability test. In this paper the principal component analysis has been implemented to improve the process variation predictions. A graphical model has been developed to detect the extrinsic cells in the array before stress and the technology yield.
Authors
- Madjid Akbal
- Joël Metz
- Jean‐Michel Portal (ORCID: https://orcid.org/0000-0002-6722-053X)
- V. Della Marca (ORCID: https://orcid.org/0000-0003-3761-8122)
- Jean-Michel Moragues
- Olivier Paulet
- Thibault Kempf
- Marc Bocquet (ORCID: https://orcid.org/0000-0003-2675-0347)
- Khaled Alkema
- Arnaud Régnier
- S.D. Perrin
- Martin Arteaga
- Brice Arrazat
Institutions
- Centre National de la Recherche Scientifique (FR)
- Aix-Marseille Université (FR)
- STMicroelectronics (France) (FR)
- Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (FR)
Publication Details
- Published
- 2024-10-06
- DOI
- https://doi.org/10.1109/iirw62856.2024.10947141
- Citations
- 1
- Primary Topic
- Advanced Battery Technologies Research
- Type
- article
- Field-Weighted Citation Impact
- 0.20