A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology
This letter presents a novel low-power, fully dynamic, latched comparator using only n-type, single-gate amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-IGZO TFTs) on a 27μm thick polyimide substrate. This circuit demonstrates a stable performance up to an input signal frequency of 15kHz with 1MHz clock. By employing a pseudo-CMOS bootstrapped load, it achieved an output voltage swing of around 90%, an input-referred offset and noise voltages of 28mV and 14mV, respectively from measurements. In addition, it can reliably detect a minimum differential input voltage of 50mV at a VDD of 4V, while consuming only 8μW power. Therefore, this design is well-suited in biomedical wearable devices which typically needs low-power.
Authors
- Vaishali Choudhary (ORCID: https://orcid.org/0000-0002-4714-7072)
- Pydi Ganga Bahubalindruni (ORCID: https://orcid.org/0000-0001-9265-448X)
Institutions
- Indian Institute of Science Education and Research, Bhopal (IN)
Publication Details
- Journal
- IEEE Solid-State Circuits Letters
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1109/lssc.2025.3557862
- Citations
- 1
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- Ministry of Education, India