A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology

This letter presents a novel low-power, fully dynamic, latched comparator using only n-type, single-gate amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-IGZO TFTs) on a 27μm thick polyimide substrate. This circuit demonstrates a stable performance up to an input signal frequency of 15kHz with 1MHz clock. By employing a pseudo-CMOS bootstrapped load, it achieved an output voltage swing of around 90%, an input-referred offset and noise voltages of 28mV and 14mV, respectively from measurements. In addition, it can reliably detect a minimum differential input voltage of 50mV at a VDD of 4V, while consuming only 8μW power. Therefore, this design is well-suited in biomedical wearable devices which typically needs low-power.

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Publication Details

Journal
IEEE Solid-State Circuits Letters
Published
2025-01-01
DOI
https://doi.org/10.1109/lssc.2025.3557862
Citations
1
Primary Topic
Thin-Film Transistor Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology

Vaishali Choudhary, Pydi Ganga Bahubalindruni
1 citations
IEEE Solid-State Circuits Letters
Thin-Film Transistor Technologies
0.73
article

A Low-Power Fully Dynamic Latched Comparator Using Flexible Oxide TFT Technology

Vaishali Choudhary, Pydi Ganga Bahubalindruni
article en
1 citations

Abstract

This letter presents a novel low-power, fully dynamic, latched comparator using only n-type, single-gate amorphous-Indium-Gallium-Zinc-Oxide thin-film transistors (a-IGZO TFTs) on a 27μm thick polyimide substrate. This circuit demonstrates a stable performance up to an input signal frequency of 15kHz with 1MHz clock. By employing a pseudo-CMOS bootstrapped load, it achieved an output voltage swing of around 90%, an input-referred offset and noise voltages of 28mV and 14mV, respectively from measurements. In addition, it can reliably detect a minimum differential input voltage of 50mV at a VDD of 4V, while consuming only 8μW power. Therefore, this design is well-suited in biomedical wearable devices which typically needs low-power.

IEEE Solid-State Circuits LettersVol. 8
Indian Institute of Science Education and Research, Bhopal (IN)
Ministry of Education, India
Affordable and clean energy
Openalex Percentile: Top 30%
Thin-Film Transistor Technologies
0.73
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