Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)
Semiconductor Quantum Dots In article number 2419940, Fabio Bersano, Adrian M. Ionescu, and co-workers achieve electrostatic and magnetic control in a silicon-on-insulator nanowire through ferromagnetic gates magnetized along the direction of carrier flow. The magnetic gate stack, alternating with a standard metallic one, is integrated into a front-end-of-line–compatible process.
Authors
- Victor Boureau (ORCID: https://orcid.org/0000-0001-6251-5892)
- Michele Ghini (ORCID: https://orcid.org/0000-0001-6927-0699)
- Pasquale Scarlino (ORCID: https://orcid.org/0000-0002-4570-5958)
- Adrian M. Ionescu (ORCID: https://orcid.org/0000-0003-2314-8887)
- Michele Aldeghi (ORCID: https://orcid.org/0000-0001-6883-6179)
- Fabio Bersano
- Gian Salis (ORCID: https://orcid.org/0000-0001-6263-4517)
- Niccolò Martinolli (ORCID: https://orcid.org/0009-0004-2221-3055)
- Thibault Aboud
Institutions
- IBM Research - Zurich (CH)
- École Polytechnique Fédérale de Lausanne (CH)
Publication Details
- Journal
- Advanced Functional Materials
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1002/adfm.202570080
- Primary Topic
- Surface Roughness and Optical Measurements
- Type
- article
- Field-Weighted Citation Impact
- 0.00