Vertical p-GaN/n-Ga<sub>2</sub>O<sub>3</sub> heterojunction diode with high switching performance

Although the forward current–voltage characteristics and breakdown voltage performance of GaN/Ga 2 O 3 p–n diodes have been extensively studied, there have been no reports on their reverse recovery characteristics.

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Publication Details

Journal
Materials Advances
Published
2025-01-01
DOI
https://doi.org/10.1039/d5ma00037h
Citations
5
Primary Topic
Ga2O3 and related materials
Type
article
Field-Weighted Citation Impact
2.14
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article

Vertical p-GaN/n-Ga2O3 heterojunction diode with high switching performance

Yasushi Takaki, Phuc Hong Than, Tho Quang Than
5 citations
Materials Advances
Ga2O3 and related materials
2.14
article

Vertical p-GaN/n-Ga2O3 heterojunction diode with high switching performance

Yasushi Takaki, Phuc Hong Than, Tho Quang Than
article en
5 citations

Abstract

Although the forward current–voltage characteristics and breakdown voltage performance of GaN/Ga 2 O 3 p–n diodes have been extensively studied, there have been no reports on their reverse recovery characteristics.

Materials AdvancesVol. 6(10)
Duy Tan University (VN), Mitsubishi Electric (Germany) (DE), Mitsubishi Electric (Japan) (JP)
Openalex Percentile: Top 13%
Ga2O3 and related materials
2.14
DOIOpen Access PDFOpenAlex
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