Study of the Microstructure, Physical and Mechanical Properties of Zirconium Disilicide Ceramics: Synthesis, Experimental Characterization and Theoretical Calculations

Zirconium disilicide (ZrSi<sub>2</sub>) is often used in high-temperature applications due to its excellent mechanical properties and thermal stability. This study aims to investigate the microstructure and physical and mechanical properties of ZrSi<sub>2</sub> ceramics prepared under high-pressure and high-temperature (HPHT) sintering conditions. The research results show that the density, Vickers hardness, and fracture toughness of the ZrSi<sub>2</sub> ceramic sample reach 4.7 g/cm<sup>3</sup>, 10.547 GPa, and 6.905 MPa·m<sup>1/2</sup>, respectively. It is worth noting that the ZrSi<sub>2</sub> ceramic sample exhibits excellent oxidation resistance and its oxidation starting temperature is 1463 °C. The experimentally measured thermal diffusion coefficient of the ZrSi<sub>2</sub> ceramic sample is 2.815 mm<sup>2</sup>/s, and the specific heat capacity is 0.48 J/g·K, from which the thermal conductivity is calculated to be 6.354 W/m·K. The first-principles calculation results show that the crystal structure of ZrSi<sub>2</sub> has good dynamic stability, and the silicon atoms and zirconium atoms are connected by strong covalent bonds. At the same time, the ZrSi<sub>2</sub> ceramic sample obtained in this experiment has a uniform grain size distribution, a high dislocation density, and a strong texture. The results of this study are crucial for the preparation and application of ZrSi<sub>2</sub> ceramics.

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Publication Details

Journal
Inorganic Chemistry
Published
2025-04-03
DOI
https://doi.org/10.1021/acs.inorgchem.5c00506
Citations
1
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
1.25

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article

Study of the Microstructure, Physical and Mechanical Properties of Zirconium Disilicide Ceramics: Synthesis, Experimental Characterization and Theoretical Calculations

Yongxin Hu, Shangzhou Liu, Quan Zhu, Jianyi Ma et al.
1 citations
Inorganic Chemistry
Semiconductor materials and interfaces
1.25
article

Study of the Microstructure, Physical and Mechanical Properties of Zirconium Disilicide Ceramics: Synthesis, Experimental Characterization and Theoretical Calculations

Yongxin Hu, Shangzhou Liu, Quan Zhu, Jianyi Ma, Yajie Yu
article en
1 citations

Abstract

Zirconium disilicide (ZrSi<sub>2</sub>) is often used in high-temperature applications due to its excellent mechanical properties and thermal stability. This study aims to investigate the microstructure and physical and mechanical properties of ZrSi<sub>2</sub> ceramics prepared under high-pressure and high-temperature (HPHT) sintering conditions. The research results show that the density, Vickers hardness, and fracture toughness of the ZrSi<sub>2</sub> ceramic sample reach 4.7 g/cm<sup>3</sup>, 10.547 GPa, and 6.905 MPa·m<sup>1/2</sup>, respectively. It is worth noting that the ZrSi<sub>2</sub> ceramic sample exhibits excellent oxidation resistance and its oxidation starting temperature is 1463 °C. The experimentally measured thermal diffusion coefficient of the ZrSi<sub>2</sub> ceramic sample is 2.815 mm<sup>2</sup>/s, and the specific heat capacity is 0.48 J/g·K, from which the thermal conductivity is calculated to be 6.354 W/m·K. The first-principles calculation results show that the crystal structure of ZrSi<sub>2</sub> has good dynamic stability, and the silicon atoms and zirconium atoms are connected by strong covalent bonds. At the same time, the ZrSi<sub>2</sub> ceramic sample obtained in this experiment has a uniform grain size distribution, a high dislocation density, and a strong texture. The results of this study are crucial for the preparation and application of ZrSi<sub>2</sub> ceramics.

Inorganic ChemistryVol. 64(14)
Sichuan University (CN), Xinjiang University (CN)
National Natural Science Foundation of China, Science Fund for Distinguished Young Scholars of Sichuan Province
Openalex Percentile: Top 23%
Semiconductor materials and interfaces
1.25
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