Realization of the SERS Effect in a Silicon Semiconductor Structure with Fano Resonance
A method for obtaining active surface-enhanced Raman scattering (SERS) substrates with an enhancement factor of ~104 is presented. It is shown that substrates with a more pronounced Fano resonance in a silicon porous structure obtained by thermal boron diffusion have a high enhancement factor.
Authors
- В. В. Трегулов
- Elena Perevedentseva (ORCID: https://orcid.org/0000-0002-1489-6747)
- N. N. Melnik (ORCID: https://orcid.org/0000-0002-7058-0333)
- D. S. Kostsov
- G. N. Skoptsova
- Yu. N. Gorbunova
Institutions
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU)
- Ryazan State University (RU)
Publication Details
- Journal
- Bulletin of the Lebedev Physics Institute
- Published
- 2025-01-01
- DOI
- https://doi.org/10.3103/s1068335624601924
- Primary Topic
- Near-Field Optical Microscopy
- Type
- article
- Field-Weighted Citation Impact
- 0.00