OPTIMIZED RESISTIVE RAM USING 2T2R CELL AND IT’S ARRAY PERFORMANCE COMPARISON WITH OTHER CELLS

In the contemporary context, non-volatile-based Resistive Random-Access Memory devices are one of the most promising and emerging technologies. It is one of the top alternatives for industrialists since they are considered to offer neuromorphic in-computing capacity. This study aims to build a 2T2R RRAM cell with reduced power dissipation compared to various RRAM and SRAM cells. The Project used Cadence Virtuoso to simulate in 90nm Technology. The proposed 2T2R structure and analyze the elements that lead to power dissipation for various optimizations. The results demonstrate that RRAM has an effective PDP which is less than most modified SRAM techniques. Furthermore, compared to RRAM cells, 2T2R is the most efficient in power dissipation, PDP, and Noise margin. A technique for reducing the power and delay has been proposed and which resulted a drastic reduction in power, delay, and PDP of the modified circuit respectively. The 2T2R circuit thus incorporated into a 4*4 array matrix which has an optimized power dissipation. As a result, the purpose of the research is to demonstrate that the RRAM cell outperforms the existing memory technologies and the 2T2R RRAM Cell and its memory array is the most stable cell and shows increased read and write performance, stability, and energy efficient.