Development for long lifetime and high efficiency DUV LEDs
Research is being actively conducted to improve the efficiency and extend the lifetime of DUV LEDs in order to commercialize products for inactivating bacteria and viruses. As an approach to improve the operating voltage of DUV LEDs, lowering the resistance of n-type AlGaN:Si contact layer with 62% AlN content was implemented by cathodoluminescence analysis for point defects such as VIII-(SiIII)n. By using this low resistance technology, operating voltage of less than 7 V could be achieved at 63 A/cm2. The degradation mechanism of DUV LEDs lifetime has been recently reported by some research group. Based on the mechanism, by improving the crystal quality of the p-type AlGaN:Mg layers, L70 of the DUV LEDs lifetime are expected to more than 20,000 hours in the current stress test. The optical output power has been demonstrated to be over 150 mW class at 350 mA.
Authors
- Tetsuya Takeuchi (ORCID: https://orcid.org/0000-0002-2378-2610)
- Shinya Boyama
- Shigefusa F. Chichibu (ORCID: https://orcid.org/0000-0001-9558-1642)
- Kohei K. Shima (ORCID: https://orcid.org/0000-0003-0967-141X)
- Yoshiki Saito (ORCID: https://orcid.org/0000-0003-3212-6356)
- Keita Kataoka (ORCID: https://orcid.org/0000-0003-4855-4339)
- Kayo Horibuchi
- Hisanori Ishiguro (ORCID: https://orcid.org/0009-0008-4192-7626)
- Koji Okuno (ORCID: https://orcid.org/0000-0002-7811-5065)
- Hiroshi Amano (ORCID: https://orcid.org/0000-0002-7598-2593)
- Maki Kushimoto (ORCID: https://orcid.org/0000-0003-3974-7139)
- Tetsuo Narita (ORCID: https://orcid.org/0000-0002-0849-360X)
- Atsushi Miyazaki
- Yoshio Honda
- Masaki Oya
Institutions
- National Institute of Technology, Toyota College (JP)
- Tohoku University (JP)
- Toyoda Gosei (Japan) (JP)
- Nagoya University (JP)
- Meijo University (JP)
Publication Details
- Published
- 2025-04-03
- DOI
- https://doi.org/10.1117/12.3044635
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.00