Advances in Next-Generation Logic Devices With Two-Dimensional Channel Materials

Semiconductor technology, particularly silicon-based micro and nano device technology, is ubiquitous today, with ever-increasing demands for higher transistor performance, integration density, and better energy efficiency. Over the decades, both industry and academia have successfully driven the exponential growth of semiconductor technology. However, the stagnant scaling of supply voltage, constrained by the Boltzmann limit, has led to increased power density in integrated chips. Additionally, scaling down transistor dimensions has encountered significant challenges, resulting in stagnant gate length scaling at around 20 nm. To address these issues, emerging materials are being actively explored to replace the silicon channel, and various novel types of devices are being considered to replace conventional silicon metal-oxide-semiconductor field-effect transistors (MOSFETs). This review presents recent advances in FETs and steep slope devices utilizing two-dimensional (2D) transition metal dichalcogenides (TMDs) as channels to continue the scaling of device dimensions, and to overcome the Boltzmann limit. These innovations hold the potential to sustain the progress in semiconductor technology and meet the demands of future electronic applications.