2D In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> Crystals for High-Performance p-Channel Transistors
Two-dimensional (2D) semiconductors are ideal channel materials for high-speed, low-power transistors in the post-Moore era due to their high mobility and excellent gate-control capacity. However, most existing 2D semiconductors tend to exhibit either n-type or ambipolar behavior. The limited availability of intrinsic p-type 2D semiconductors significantly restricts their application in logic circuits and integrated circuits. Herein, we present the experimental discovery of high-quality In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> single crystals, which possess a layered structure and exhibit a p-type nature with a low hole-effective mass of 0.27 m<sub>0</sub>. The 2D In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> nanosheets, exfoliated from the bulk crystals, show good stability in air, with thickness-dependent variations in Raman peaks and bandgaps. Furthermore, we have successfully developed high-performance 2D In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> p-channel transistors, achieving a hole mobility and on/off current ratio up to 43 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and 10<sup>5</sup> at room temperature, respectively. Thus, In<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> emerges as a promising p-type 2D semiconductor for next-generation electronics.
Authors
- Yujie Yan (ORCID: https://orcid.org/0000-0002-9160-1076)
- Xiang Chen (ORCID: https://orcid.org/0000-0001-5100-1482)
- Xudong Pei (ORCID: https://orcid.org/0000-0001-5188-6698)
- Xiufeng Song (ORCID: https://orcid.org/0000-0002-7179-1431)
- Weigao Xu (ORCID: https://orcid.org/0000-0002-3014-756X)
- Seungwoo Son (ORCID: https://orcid.org/0000-0001-6003-4382)
- L. Perfetti
- Shiying Guo (ORCID: https://orcid.org/0000-0002-7772-7190)
- Biao Xu (ORCID: https://orcid.org/0000-0002-6645-3905)
- Jie Gao (ORCID: https://orcid.org/0000-0002-4321-4063)
- Zonghoon Lee (ORCID: https://orcid.org/0000-0003-3246-4072)
- Haibo Zeng (ORCID: https://orcid.org/0000-0002-0281-3617)
- Yi Zhang (ORCID: https://orcid.org/0000-0003-1204-8717)
- Shengli Zhang (ORCID: https://orcid.org/0000-0003-4981-231X)
- Jiamin Lin
- Kaili Wang (ORCID: https://orcid.org/0000-0001-8192-2186)
- Haonan Nie
- Zhesheng Chen (ORCID: https://orcid.org/0000-0001-7978-5637)
- Tong Zhao (ORCID: https://orcid.org/0000-0003-1818-7064)
- Peng Wang (ORCID: https://orcid.org/0000-0001-9938-5577)
Institutions
- Centre National de la Recherche Scientifique (FR)
- École Polytechnique (FR)
- Nanjing University of Science and Technology (CN)
- University of Warwick (GB)
- Institute for Basic Science (KR)
- Collaborative Innovation Center of Advanced Microstructures (CN)
- Ulsan National Institute of Science and Technology (KR)
- Nanjing University (CN)
- Ministry of Industry and Information Technology (CN)
Publication Details
- Journal
- Nano Letters
- Published
- 2025-04-03
- DOI
- https://doi.org/10.1021/acs.nanolett.5c00580
- Citations
- 5
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 2.59
Funders
- National Natural Science Foundation of China
- Natural Science Foundation of Jiangsu Province
- National Key Research and Development Program of China