Advancements and challenges in III‐Nitride Semiconductor‐Based Power Rectifiers

The wide bandgap (WBG) and Ultra‐wideband gap (UWBG) semiconductors have gained momentum in recent years. Although Silicon‐based technology has reached peak technological advancements, it falls short of overcoming its fundamental limitations, particularly for high‐temperature and high‐power applications. The advancements in GaN technology enabled the exploration of UWBG III‐N semiconductors for designing power devices. This review paper examines the advancements in III‐Nitride‐based power diodes as rectifiers, focusing on research gaps and challenges in addition to the fabrication difficulties such as heteroepitaxy, interface quality, and doping complexities associated with III‐N materials for power applications. The emphasis is laid on cubic BN as a semiconductor, its potential benefits, and recent achievements in GaN technology and AlN‐based power devices. In this article, the techniques to improve the breakdown voltage of such power devices are summarized. Choosing the high critical electric field material for the drift layer and designing a heterostructure power diode without compromising on the quality of the epitaxial layer is challenging in the case of III‐Nitride materials, despite the challenges associated with achieving high‐quality growth, III‐Nitride semiconductors remain an ideal choice for power applications.