Low-Voltage Gallium Oxide Memristor with Enhanced Cyclic Endurance, Stability, and Memory Window

We present an Al/Cu/GaOx/Au memristor that combines low-voltage operation (set and reset voltages of 0.48 and −0.3 V, respectively), high cyclic endurance (>13,987 cycles), a large memory window (∼4900), and stable multilevel resistance states. These outstanding properties are achieved by leveraging the synergistic interaction between a Cu-based electrochemical metallization mechanism and a GaOx intermediate layer. Comparative studies and atomistic simulations reveal that the low energy barrier for Cu diffusion into GaOx is pivotal in enhancing device performance, enabling superior functionality compared to previously reported GaOx-based memristors. This memristor supports reliable multilevel resistance programming via compliance current modulation and voltage-controlled filament rupture. Furthermore, its exceptional endurance, among the highest reported for GaOx memristors, was validated through rigorous current–voltage cycling tests and voltage pulse measurements. This work establishes the Al/Cu/GaOx/Au memristor as a promising configuration for advancing nonvolatile memory technologies, offering significant potential for high-performance, low-power storage, and neuromorphic computing solutions.