Study of Laser-Induced Single Event Effects in SiC Power MOSFETs
This article investigates the single event effects (SEEs) of SiC power MOSFETs by laser irradiation. The single event burnout (SEB) and leakage current increase phenomenon are observed under pulsed laser two-photon absorption (TPA) conditions. The energy threshold for SEE corresponding to different bias voltages is obtained. An improved equivalent linear energy transfer (ELET) model is proposed to correlate the laser-induced SEE and the heavy-ion-induced SEE in SiC MOSFETs. Experimental results show that when laser energy exceeds 42 nJ, the error between the ELET values from the improved model and linear energy transfer (LET) from heavy-ion experiments is as low as 5%, significantly enhancing the accuracy of laser evaluation.
Authors
- Xiaoping Ouyang (ORCID: https://orcid.org/0000-0001-8474-2869)
- Hongjia Song (ORCID: https://orcid.org/0000-0003-0288-2425)
- Hong Zhang (ORCID: https://orcid.org/0009-0006-5130-5332)
- Yujuan He
- Teng Ma (ORCID: https://orcid.org/0000-0001-7989-9802)
- J. B. Wang
- Haoming Wang
- Chao Peng (ORCID: https://orcid.org/0000-0003-2486-7605)
- Zhangang Zhang (ORCID: https://orcid.org/0000-0002-6400-9931)
- Zhifeng Lei (ORCID: https://orcid.org/0000-0003-0541-3739)
- Xiangli Zhong (ORCID: https://orcid.org/0000-0002-2639-9131)
- Zhao Fu
Institutions
- China Electronic Product Reliability and Environmental Test Institute (CN)
- Northwest Institute of Nuclear Technology (CN)
- Xiangtan University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-04-03
- DOI
- https://doi.org/10.1109/ted.2025.3552549
- Citations
- 1
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.73
Funders
- National Natural Science Foundation of China