Semiconductor Loss Reduction With SiC mosfets in Safe Space High-Power Operation Conditions Using Space Qualified Drivers and Without Redesigning the System

High power and high voltage applications are a major requirement in the future space missions. The feasibility and efficiency of these systems are currently limited by the space qualified silicon semiconductors, so silicon carbide devices are proposed to overcome the said limitations. However, silicon carbide needs to be operated in specific conditions to be safe to use in space applications. In addition, there are no space qualified drivers for silicon carbide and industry is hesitant to redesign completely their systems. This work proves silicon carbide MOSFETs can be used with space qualified drivers, while operating in safe operating conditions for space and still obtaining performance benefits when compared to space qualified silicon MOSFETs. To ensure the accuracy of the comparison, conduction and switching losses are directly measured in the analyzed devices, in an identical laboratory setup and space operation conditions specially designed for this work. The paper also shows how the achieved loss reduction can be used in specific space applications. The article proves silicon carbide MOSFETs are an enabling technology for efficient high-power applications in space, using well-known space qualified drivers and without having to redesign the systems.