Analysis of electromagnetic radiation characteristics under TID radiation effects of trench-gate SiC MOSFETs

Abstract This article is focused on the electromagnetic radiation effects of Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under total ionizing dose (TID) effect. A 650V trench-gate SiC MOSFET was selected as the experimental subject. The variations in the electronic characteristics of SiC MOSFETs were explained from the perspective of crystal defects. Furthermore, an analysis of the trends in the electromagnetic radiation characteristics of the device was conducted based on the changes in the electrical properties of SiC devices. A broad network model for electromagnetic radiation signals from SiC MOSFETs was proposed. This model facilitates the prediction and assessment of the damage extent and operational status of SiC MOSFET power devices through electromagnetic radiation signals. Additionally, a method for evaluating the on-orbit cycle of SiC devices was introduced based on this network model, presenting a new approach for predicting the lifespan and reliability analysis of SiC MOSFETs operating in space.