Graphitization of tincone <i>via</i> molecular layer deposition: investigating sulfur's role and structural impacts

This study investigated the synthesis of sp<sup>2</sup> carbons using molecular layer deposition (MLD) with tincone, which utilized tetrakis(dimethylamido)tin (TDMASn) as the metal precursor and 4-mercaptophenol (4MP) as the organic linker. Tincone films were deposited at 100 °C without impurities and then subjected to vacuum post-annealing in a tube furnace to induce graphitization. Compositional and structural analyses revealed significant changes as the annealing temperature increased, including the breakdown of the bonds between Sn, O, S, and C. This process led to the reduction of Sn, O, and S and the formation of sp<sup>2</sup> carbons. At 400 °C, the film thickness was reduced by 57.5%, and the refractive index increased from 1.8 to 1.97, as confirmed by the emergence of G-band and 2D-band peaks in the Raman spectra. X-ray photoelectron spectroscopy analysis indicated that the residual Sn content decreased to 0.75% at 600 °C. Interestingly, at temperatures above 400 °C, unique behavior was observed: increased C-S bonding disrupted the graphite structure due to the thiol (-SH) groups in 4MP. This disruption led to a reduction in C-C bonding and a decrease in the G-band peak in the Raman spectra. This study provides the first detailed investigation of the role of S in the graphitization of tincone, highlighting its impact on sp<sup>2</sup> carbon formation and emphasizing the importance of the careful selection of precursors and linkers in MLD processes.

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Publication Details

Journal
Dalton Transactions
Published
2025-01-01
DOI
https://doi.org/10.1039/d5dt00529a
Citations
1
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
0.73

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article

Graphitization of tincone via molecular layer deposition: investigating sulfur's role and structural impacts

Gi-Beom Park, Hae Lin Yang, Jin‐Seong Park, Ji-Min Kim et al.
1 citations
Dalton Transactions
Semiconductor materials and devices
0.73
article

Graphitization of tincone via molecular layer deposition: investigating sulfur's role and structural impacts

Gi-Beom Park, Hae Lin Yang, Jin‐Seong Park, Ji-Min Kim, Hyolim Jung
article en
1 citations

Abstract

This study investigated the synthesis of sp<sup>2</sup> carbons using molecular layer deposition (MLD) with tincone, which utilized tetrakis(dimethylamido)tin (TDMASn) as the metal precursor and 4-mercaptophenol (4MP) as the organic linker. Tincone films were deposited at 100 °C without impurities and then subjected to vacuum post-annealing in a tube furnace to induce graphitization. Compositional and structural analyses revealed significant changes as the annealing temperature increased, including the breakdown of the bonds between Sn, O, S, and C. This process led to the reduction of Sn, O, and S and the formation of sp<sup>2</sup> carbons. At 400 °C, the film thickness was reduced by 57.5%, and the refractive index increased from 1.8 to 1.97, as confirmed by the emergence of G-band and 2D-band peaks in the Raman spectra. X-ray photoelectron spectroscopy analysis indicated that the residual Sn content decreased to 0.75% at 600 °C. Interestingly, at temperatures above 400 °C, unique behavior was observed: increased C-S bonding disrupted the graphite structure due to the thiol (-SH) groups in 4MP. This disruption led to a reduction in C-C bonding and a decrease in the G-band peak in the Raman spectra. This study provides the first detailed investigation of the role of S in the graphitization of tincone, highlighting its impact on sp<sup>2</sup> carbon formation and emphasizing the importance of the careful selection of precursors and linkers in MLD processes.

Dalton TransactionsVol. 54(17)
Hanyang University (KR), Anyang University (KR)
National Research Foundation, Ministry of Trade, Industry and Energy, National Research Foundation of Korea, Ministry of Science and ICT, South Korea
Openalex Percentile: Top 30%
Semiconductor materials and devices
0.73
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