Enhancement of IR Absorption of Silicon by Its Doping with Sulfur Atoms
The extension of the spectral absorption range of crystalline silicon to the near- and mid-IR region is possible by doping it using ion implantation and subsequent annealing methods. Pulsed laser annealing makes it possible to eliminate ion-induced defects, which leads to recrystallization of the crystal structure, and activation of impurities. The crystal structure of the obtained samples, as well as their chemical, optical, and electrical characteristics are analyzed comprehensively.
Authors
- S. I. Kudryashov (ORCID: https://orcid.org/0000-0001-6657-2739)
- Ivan Podlesnykh (ORCID: https://orcid.org/0000-0003-3381-2972)
- M. S. Kovalev (ORCID: https://orcid.org/0000-0001-5074-0718)
- Е. Н. Кабачков (ORCID: https://orcid.org/0000-0003-3790-935X)
- V. A. Dravin
Institutions
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU)
- Bauman Moscow State Technical University (RU)
- Osipyan Institute of Solid State Physics RAS (RU)
- Institute of Problems of Chemical Physics (RU)
Publication Details
- Journal
- Bulletin of the Lebedev Physics Institute
- Published
- 2025-01-01
- DOI
- https://doi.org/10.3103/s1068335624602139
- Primary Topic
- Thin-Film Transistor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00