Structure of Arrays of Laterally Associated InGaAs/GaAs Quantum Dots Grown by Molecular Beam Epitaxy with a Bi Surfactant
Use is made of atomic force and scanning electron microscopies to study the formation of InGaAs/GaAs quantum dots by molecular beam epitaxy under the action of a Bi vapor flow on the growth surface at different temperatures of the GaAs substrate. It is shown that Bi acts as a surfactant, increasing the temperature of emergence of laterally associated quantum dots by 100°C.
Authors
- A. V. Klekovkin (ORCID: https://orcid.org/0000-0002-8948-4878)
- V. I. Tsekhosh
- А. A. Rudenko (ORCID: https://orcid.org/0000-0003-3139-421X)
- И. П. Казаков
Institutions
- P.N. Lebedev Physical Institute of the Russian Academy of Sciences (RU)
Publication Details
- Journal
- Bulletin of the Lebedev Physics Institute
- Published
- 2025-01-01
- DOI
- https://doi.org/10.3103/s1068335624601031
- Primary Topic
- Semiconductor Quantum Structures and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00