Dilute anion alloyed III-nitride nanowires for photoelectrochemical water splitting

Dilute anion alloy nanowires of GaN, grown via plasma-assisted vapor–liquid–solid method with nitrogen and Au or Cu clusters, show ∼2 eV bandgap and excellent photoelectrochemical activity for unassisted water splitting and solar-chemical conversion.

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Publication Details

Journal
Energy Advances
Published
2025-01-01
DOI
https://doi.org/10.1039/d4ya00584h
Primary Topic
Electronic and Structural Properties of Oxides
Type
article
Field-Weighted Citation Impact
0.00
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article

Dilute anion alloyed III-nitride nanowires for photoelectrochemical water splitting

Mahendra K. Sunkara, Madhu Menon, Antonis N. Andriotis, Abhinav Nouduri et al.
Energy Advances
Electronic and Structural Properties of Oxides
article

Dilute anion alloyed III-nitride nanowires for photoelectrochemical water splitting

Mahendra K. Sunkara, Madhu Menon, Antonis N. Andriotis, Abhinav Nouduri, Sonia Juliana Calero-Barney
article en

Abstract

Dilute anion alloy nanowires of GaN, grown via plasma-assisted vapor–liquid–solid method with nitrogen and Au or Cu clusters, show ∼2 eV bandgap and excellent photoelectrochemical activity for unassisted water splitting and solar-chemical conversion.

Energy AdvancesVol. 4(5)
University of Louisville (US), FORTH Institute of Electronic Structure and Laser (GR)
Openalex Percentile: Top 96%
Electronic and Structural Properties of Oxides
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