Ultrathin tantalum films for Schottky contacts on 4H silicon carbide
Since ultrathin films of 2 nm thickness with Ni and W revealed interesting aspects in Schottky barrier diodes in previous works, exhibiting effective quality of the interface and thermal stability under electrical characterizations. This work presents data obtained using Ta as Schottky contact, even though it is often used as Ohmic contact, but due to its refractory properties and low work function, the result could be favorable to low voltage drop devices in power electronics. Under the development of the work, a range of annealing processing was conducted to verify the phenomena involved combining tantalum ultrathin films. After electrical tests under I–V curves, a range of Schottky barrier heights (SBHs) was noticed without Fermi level pinning, following a highlighted device that demonstrated results of ideality of around 1, SBH of 0.8 eV, alto showing high rectification ratio and low reverse leakage current, around 10−6 A at −200 V. To finish the work, XPS and SEM characterization were carried out to provide interface structure details and reveal tantalum oxides and carbides, where they probably contribute to the Schottky behavior, and the values achieved.
Authors
- Andrei V. Alaferdov (ORCID: https://orcid.org/0000-0002-0638-3829)
- Renato Amaral Minamisawa (ORCID: https://orcid.org/0000-0002-4187-544X)
- Rodrigo Reigota César (ORCID: https://orcid.org/0000-0002-6671-1230)
- Ednan Joanni (ORCID: https://orcid.org/0000-0001-5041-1770)
- Ricardo Cotrin Teixeira (ORCID: https://orcid.org/0000-0002-5443-2605)
- J. A. Diniz (ORCID: https://orcid.org/0000-0003-3274-3303)
- Jacilene Martins Medeiros (ORCID: https://orcid.org/0000-0002-1104-6720)
- Renato Beraldo (ORCID: https://orcid.org/0000-0002-6274-7797)
- Érick A. Santos (ORCID: https://orcid.org/0000-0001-5831-8706)
- Thebano Emílio de Almeida Santos (ORCID: https://orcid.org/0000-0001-5473-1376)
- Marcos V. Puydinger dos Santos (ORCID: https://orcid.org/0000-0001-9971-5994)
- M. Mederos
Institutions
- Universidade Estadual de Campinas (UNICAMP) (BR)
- FHNW University of Applied Sciences and Arts Northwestern Switzerland (CH)
- Center for Information Technology (US)
- Brazilian Synchrotron Light Laboratory (BR)
- Brazilian Center for Research in Energy and Materials (BR)
Publication Details
- Journal
- Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
- Published
- 2025-04-01
- DOI
- https://doi.org/10.1116/6.0004313
- Citations
- 1
- Primary Topic
- Semiconductor materials and interfaces
- Type
- article
- Field-Weighted Citation Impact
- 1.25