Conversion Efficiency Optimization of All-inorganic Perovskite CsPbI\(_{3-x}\)Br\(_x\) Solar Cell with Cu\(_2\)O and SnO\(_2\) as Transport Layers

In this modelling study, carried out using SCAPS 1 D software, we optimized the conversion efficiency of our Al/SnO\(_2\)/CsPbI\(_{3-x}\)Br\(_x\)/Cu\(_2\)O/ITO structure device. The study reveals that CsPbI\(_{3-x}\) is the best absorber material that can be obtained (x ꞓ ℕ). from The study shows that the suitable values for the thickness of the hole (Cu\(_2\)O) and electron (SnO\(_2\)) transport layers are 1000 nm and 30 nm respectively. For the CsPbI\(_{3-x}\) absorber of the solar cell, a thickness of 1000 nm and a defect density of 10\(^{10}\) Cm\(^{-3}\) are required to give a conversion efficiency of 20.43% to the device. Fixing the ITO back contact energy at 4.7 eV leads to an optimization of the conversion efficiency of the solar cell which can reach up to 26.76 % giving our device one of the best conversion efficiencies.