Modeling and Analysis for Switching Crosstalk of SiC MOSFETs Considering Temperature- Dependent Characteristics

Compared with silicon (Si) devices, silicon carbide (SiC) MOSFETs have faster switching speed and lower switching loss, which makes them better candidates for high voltage and high frequency power converter applications. However, the higher slew rates of the drain-source voltage and the reverse recovery current lead to more serious crosstalk problems, especially at high operating temperatures. This paper develops an accurate crosstalk model of SiC MOSFETs that considers the temperature-dependent I-V and reverse recovery characteristics, as well as precise C-V characteristics. First, the influences of temperature-dependent reverse recovery on crosstalk voltages are analyzed, and a simple reverse recovery model is established. Then, the I-V and C-V characteristics of SiC MOSFETs are modeled, which can accurately describe the dynamic behavior of the devices. The circuit-level model that combines the parasitic parameters and intrinsic capacitances is developed. Finally, the proposed crosstalk model is verified by a double pulse test circuit. Compared to the SPICE model, the crosstalk voltages calculated by the proposed model show greater consistency with experimental results. Furthermore, the influences of circuit parameters on crosstalk voltages are discussed at different temperatures, which can provide accurate design guidance for mitigating crosstalk problems.