AI-Assisted Deep-Learning-Based Design of High-Efficiency Class F Power Amplifiers
This article presents a deep-learning-based approach for designing Class F power amplifiers (PAs). We use convolutional neural networks (CNNs) to predict the scattering parameters of pixelated electromagnetic (EM) layouts. Using a CNN-based surrogate model and an evolutionary algorithm, we synthesize complex Class F output networks. As a proof of concept, we implement a gallium nitride (GaN) HEMT Class F PA, achieving a measured output power of 41.6 dBm and a drain efficiency of 74% at 2.9 GHz. The prototype also linearly reproduces a 20-MHz modulated signal with an 8.5-dB peak-to-average power ratio (PAPR), achieving an adjacent channel leakage ratio (ACLR) of −50.7 dBc with digital predistortion (DPD). To the best of our knowledge, this is the first deep-learning-based Class F PA design using pixelated layout structures.
Authors
- Christian Fager (ORCID: https://orcid.org/0000-0001-8228-0736)
- Haojie Chang (ORCID: https://orcid.org/0000-0001-9237-0081)
- Han Zhou (ORCID: https://orcid.org/0000-0003-0014-5317)
- G. Mélin (ORCID: https://orcid.org/0009-0008-6366-9592)
- David Widén (ORCID: https://orcid.org/0009-0001-9481-9679)
- Ludvig Fornstedt
Institutions
- Chalmers University of Technology (SE)
Publication Details
- Journal
- IEEE Microwave and Wireless Technology Letters
- Published
- 2025-04-03
- DOI
- https://doi.org/10.1109/lmwt.2025.3552495
- Citations
- 5
- Primary Topic
- Advanced Power Amplifier Design
- Type
- article
- Field-Weighted Citation Impact
- 3.65