Assessment of Germanium-GNR Based Hetero Structured Tunnel Field Effect Transistor for Modulated Work Function

This research primarily aimed to investigate the electrostatic behavior of the graphene nanoribbon tunnel field effect transistor (GeGNRTFET). A heterostructured TFET device based on GNR is proposed, utilizing lower bandgap germanium as the source material. This approach, aided by a TCAD simulator, aims to attain a reduced bandgap and enhanced carrier mobility, thereby optimizing the electrical performance. The transfer characteristic of the suggested structure is shown, and many FOMs are then extracted from it. Within this framework, the DC characteristics under examination include the ON current (Ion), transconductance (gm), subthreshold swing (SS), threshold voltage (Vth), and the Ion/Ioff ratio. Images depicting the energy diagrams in both their inactive and active states are also readily accessible. Various values of the gate work function are employed to conduct the research. This research aims to analyze and compare the direct current parameter performance of various tunneling field-effect transistor architectures utilizing diverse source materials. The proposed device demonstrates exceptional performance and substantiates its applicability in low power instances.