10kV SiC MOSFET Module for Traction Converter Application
The use of silicon carbide (SiC) MOSFET power modules offers benefits such as rapid switching, excellent thermal conductivity, and minimal losses, supporting the advancement of energy-efficient, highly reliable high-power locomotive traction converters. In this paper, a $10 \mathrm{kV} / 125 \mathrm{~A}$ halfbridge high-voltage silicon carbide MOSFET power module for traction drive system is designed and its electrical properties are investigated. A test circuit has been built for a double-pulse simulation to evaluate the dynamic and static capabilities of the module. It has been tested in various physical simulations, such as electromagnetic, thermal, and mechanical analyses, confirming its suitability for use in traction converters and other high-voltage applications.
Authors
- Jianfu Chen (ORCID: https://orcid.org/0000-0002-9920-1886)
- Fan Zhang (ORCID: https://orcid.org/0000-0002-4660-4163)
- Cheng Zhao (ORCID: https://orcid.org/0000-0001-7205-4196)
- Hongyuan Wu (ORCID: https://orcid.org/0009-0002-7406-1394)
- Xiaotian Zhang (ORCID: https://orcid.org/0000-0002-1571-1257)
- Junjie Zhu (ORCID: https://orcid.org/0000-0002-7662-4915)
- Yong Chen (ORCID: https://orcid.org/0000-0003-1092-1877)
- Cheng Xu (ORCID: https://orcid.org/0000-0003-4890-2030)
Institutions
- Chongqing University (CN)
- China Southern Power Grid (China) (CN)
- Xi'an Jiaotong University (CN)
Publication Details
- Published
- 2024-10-19
- DOI
- https://doi.org/10.1109/dcts62535.2024.10941527
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- China Southern Power Grid