A Receiver System for WiFi-6 Communication Using GaAs pHEMT Process

A receiver system that can be applied to wireless fidelity (WiFi) communication using the gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) process is proposed in this paper. Based on the GaAs pHEMT process, the implementation approaches of the logic control and power regulator required for the WiFi receiver system are proposed in this paper. In addition, the necessary radio frequency (RF) modules, such as the low noise amplifier (LNA) and single pole double throw (SPDT) switch, are also implemented in the same chip. The final designed receiver system consumes a quiescent current of 17 mA with a chip area of 0.7 * 1.3 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>. The final simulated and test results show that this receiver system has good performance in all operating modes whose LNA path has a gain of 15 dB, a noise figure of 1.9 dB, and a P1dB of 15 dBm; the bypass path has a received signal attenuation of 8 dB; the transmission path has a power capacity of 31 dBm and an SPDT switch insertion loss of 0.6 dB; the power management module can digitally output a stable 3 V voltage with a load capacity of 20 mA.