Modeling conformality of Al₂O₃ deposited in high aspect ratio structure by atomic layer deposition

Abstract In this study, we propose a novel model to predict Al 2 O 3 film conformality in different aspect ratio trench structures under various process conditions. This model is grounded on a two-dimensional diffusion-reaction equation integrated with the distance regularized level set evolution method based on edge active contour. The simulation results demonstrate that increasing the gas pressure, the pulse time, and the initial sticking probability of precursor and co-reactant molecules can enhance conformality during the deposition process of the Al 2 O 3 film. And the higher deposition temperature and lower initial sticking probability of co-reactant molecules can also lead to better film conformality. By employing our proposed model, both researchers and engineers can refine atomic layer deposition process parameters, thereby ensuring the fabrication of high-quality deposition films for advanced semiconductor structures with high aspect ratio structures.