Molecular direct bonding and transfer of 2D MoS₂ layer over a full 200 mm silicon wafer

Abstract Two-dimensional (2D) materials offer exceptional properties for microelectronics, yet scaling these technologies from laboratory research to industrial applications remains challenging. Processes for growth, transfer, and fabrication require significant adaptation. Direct bonding and transfer without polymer intermediaries are particularly attractive to avoid organic residues and potential defects. This study demonstrates the transfer of 2D MoS 2 layers onto full 200 mm silicon wafers using direct molecular bonding. Additionally, a water-mediated transfer process from the growth substrate to the target wafer is described. With the use of a hydrophobic silicon wafer, over 95% of the 2D material surface is successfully transferred while preserving MoS 2 quality, as verified through photoluminescence characterization.