Design and simulation of double-side illuminated CuIn_xGa_1−xSe/Sb₂Se₃/Si solar cell

Abstract The efficiency and stability of conventional solar cells remain key challenges in advancing photovoltaic technology. This study analyzes the performance of an innovative double-illuminated hybrid solar cell incorporating CuIn x Ga 1−x Se, Sb 2 Se 3 , and Si layers. The primary objective is to optimize efficiency in a device capable of uniformly capturing light from both sides. To achieve this, we propose a novel architecture that leverages the optical and electrical advantages of these materials and utilize the SCAPS-1D simulator to assess the effects of various parameters. The optimization process focuses on tuning the gallium composition with optimal value of Ga/In=0.2, adjusting layer thicknesses (2–3 μm), and refining doping concentrations to enhance carrier transport and minimize recombination losses. Despite challenges related to performance asymmetry and thermal sensitivity, the results indicate a maximum efficiency of 19.8% under right-side illumination and 15.4% under left-side illumination. These optimal efficiencies are achieved under AM1.5 G spectrum conditions at 300 K. This double-illuminated hybrid approach presents a promising pathway for developing high-efficiency solar cells capable of operating effectively under diverse lighting conditions.