Flicker Noise Behavior in Advanced Bulk FinFETs at Cryogenic Temperatures

This work investigates the flicker (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1}/{f}$ </tex-math></inline-formula>) noise in bulk 12-nm regular threshold voltage (RVT) and super-low threshold voltage (SLVT) n- and p-FinFETs from 300 K down to the cryogenic temperatures range (up to 10 K). The dominant source of noise is carrier number fluctuation for the entire temperature range for both n- and p-FinFETs. The normalized noise is demonstrated to be independent of temperature at several gate overdrive voltages. A detailed comparison of RVT and SLVT devices is presented based on their flicker noise performance, which shows a weak-to-no significant increase in normalized noise in RVT and SLVT FinFETs at 10 and 300 K. The frequency exponent (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>) has been examined, showing a uniform trap distribution and weak temperature dependence. The trapping time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {T}}$ </tex-math></inline-formula>) is analyzed and found to be temperature-independent, possibly due to the temperature-dependent behavior of the tunneling time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {o}}$ </tex-math></inline-formula>), leading to the minimal temperature dependence of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>. Moreover, active volume trap density (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {T}}$ </tex-math></inline-formula>) causing flicker noise is studied with temperature using the carrier number fluctuation model, which is illustrated to be nearly constant by combining the impact of tunneling parameter (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula>) and thermal energy with temperature.

Authors

Institutions

Publication Details

Journal
IEEE Transactions on Electron Devices
Published
2025-03-05
DOI
https://doi.org/10.1109/ted.2025.3544996
Primary Topic
Advancements in Semiconductor Devices and Circuit Design
Type
article
Field-Weighted Citation Impact
0.00
Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Flicker Noise Behavior in Advanced Bulk FinFETs at Cryogenic Temperatures

Shruti Pathak, Abhisek Dixit, Oscar H. Gonzalez, P. Srinivasan et al.
IEEE Transactions on Electron Devices
Advancements in Semiconductor Devices and Circuit Design
article

Flicker Noise Behavior in Advanced Bulk FinFETs at Cryogenic Temperatures

Shruti Pathak, Abhisek Dixit, Oscar H. Gonzalez, P. Srinivasan, Deepesh Sharma
article en

Abstract

This work investigates the flicker (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1}/{f}$ </tex-math></inline-formula>) noise in bulk 12-nm regular threshold voltage (RVT) and super-low threshold voltage (SLVT) n- and p-FinFETs from 300 K down to the cryogenic temperatures range (up to 10 K). The dominant source of noise is carrier number fluctuation for the entire temperature range for both n- and p-FinFETs. The normalized noise is demonstrated to be independent of temperature at several gate overdrive voltages. A detailed comparison of RVT and SLVT devices is presented based on their flicker noise performance, which shows a weak-to-no significant increase in normalized noise in RVT and SLVT FinFETs at 10 and 300 K. The frequency exponent (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>) has been examined, showing a uniform trap distribution and weak temperature dependence. The trapping time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {T}}$ </tex-math></inline-formula>) is analyzed and found to be temperature-independent, possibly due to the temperature-dependent behavior of the tunneling time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {o}}$ </tex-math></inline-formula>), leading to the minimal temperature dependence of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>. Moreover, active volume trap density (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {T}}$ </tex-math></inline-formula>) causing flicker noise is studied with temperature using the carrier number fluctuation model, which is illustrated to be nearly constant by combining the impact of tunneling parameter (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula>) and thermal energy with temperature.

IEEE Transactions on Electron DevicesVol. 72(4)
GlobalFoundries (United States) (US), Indian Institute of Technology Delhi (IN)
Affordable and clean energy
Openalex Percentile: Top 95%
Advancements in Semiconductor Devices and Circuit Design
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.