Flicker Noise Behavior in Advanced Bulk FinFETs at Cryogenic Temperatures
This work investigates the flicker (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1}/{f}$ </tex-math></inline-formula>) noise in bulk 12-nm regular threshold voltage (RVT) and super-low threshold voltage (SLVT) n- and p-FinFETs from 300 K down to the cryogenic temperatures range (up to 10 K). The dominant source of noise is carrier number fluctuation for the entire temperature range for both n- and p-FinFETs. The normalized noise is demonstrated to be independent of temperature at several gate overdrive voltages. A detailed comparison of RVT and SLVT devices is presented based on their flicker noise performance, which shows a weak-to-no significant increase in normalized noise in RVT and SLVT FinFETs at 10 and 300 K. The frequency exponent (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>) has been examined, showing a uniform trap distribution and weak temperature dependence. The trapping time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {T}}$ </tex-math></inline-formula>) is analyzed and found to be temperature-independent, possibly due to the temperature-dependent behavior of the tunneling time constant (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\tau _{\text {o}}$ </tex-math></inline-formula>), leading to the minimal temperature dependence of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula>. Moreover, active volume trap density (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${N}_{\text {T}}$ </tex-math></inline-formula>) causing flicker noise is studied with temperature using the carrier number fluctuation model, which is illustrated to be nearly constant by combining the impact of tunneling parameter (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\gamma $ </tex-math></inline-formula>) and thermal energy with temperature.
Authors
- Shruti Pathak (ORCID: https://orcid.org/0000-0001-7595-5205)
- Abhisek Dixit (ORCID: https://orcid.org/0000-0002-2244-1697)
- Oscar H. Gonzalez
- P. Srinivasan (ORCID: https://orcid.org/0000-0002-9973-5212)
- Deepesh Sharma (ORCID: https://orcid.org/0000-0002-9861-710X)
Institutions
- GlobalFoundries (United States) (US)
- Indian Institute of Technology Delhi (IN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2025-03-05
- DOI
- https://doi.org/10.1109/ted.2025.3544996
- Primary Topic
- Advancements in Semiconductor Devices and Circuit Design
- Type
- article
- Field-Weighted Citation Impact
- 0.00