Intrinsic Modulation Response and Electrical Parasitics in Oxide‐confined Vertical‐Cavity Surface‐Emitting Lasers Based on Single or Multiple Apertures

ABSTRACT Small aperture (∼2 µm) oxide‐confined single‐mode (SM) Vertical‐Cavity Surface‐Emitting Lasers (VCSELs) are capable of intrinsic optical modulation bandwidth above 42 GHz at low currents (∼2 mA). The measured optical bandwidth is limited to ∼36‐38 GHz by the VCSEL resistance and capacitance (RC parasitics). To match requirements for industrial VCSELs, we applied a single mesa multi‐aperture (MA) single‐mode (SM) VCSEL design. The design is based on 4 diamond‐shaped apertures at ∼10 µm pitch and an effective diameter of a single aperture of ∼1.7‐2 µm. Higher capacitance of the large VCSEL mesa is compensated by a reduced resistance (50Ω) of the device, allowing optical bandwidth f ‐3dBo ∼32 GHz. The intrinsic optical bandwidth f ‐3dBo of ∼45 GHz is extracted. MA SM VCSEL allows narrow spectral width and error‐free 50‐Gbaud data transmission over 200 m OM5 multimode fibre (MMF).

Authors

Institutions

Publication Details

Journal
Electronics Letters
Published
2025-01-01
DOI
https://doi.org/10.1049/ell2.70234
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
Field-Weighted Citation Impact
0.00

Funders

Controls
|||
ALL TIME
JAN
FEB
MAR
APR
MAY
JUN
JUL
AUG
SEP
OCT
article

Intrinsic Modulation Response and Electrical Parasitics in Oxide‐confined Vertical‐Cavity Surface‐Emitting Lasers Based on Single or Multiple Apertures

N. N. Ledentsov, J. P. Turkiewicz, Ilya E. Titkov, O. Makarov et al.
Electronics Letters
Semiconductor Lasers and Optical Devices
article

Intrinsic Modulation Response and Electrical Parasitics in Oxide‐confined Vertical‐Cavity Surface‐Emitting Lasers Based on Single or Multiple Apertures

N. N. Ledentsov, J. P. Turkiewicz, Ilya E. Titkov, O. Makarov, V. A. Shchukin, V. P. Kalosha, Łukasz Chorchos
article en

Abstract

ABSTRACT Small aperture (∼2 µm) oxide‐confined single‐mode (SM) Vertical‐Cavity Surface‐Emitting Lasers (VCSELs) are capable of intrinsic optical modulation bandwidth above 42 GHz at low currents (∼2 mA). The measured optical bandwidth is limited to ∼36‐38 GHz by the VCSEL resistance and capacitance (RC parasitics). To match requirements for industrial VCSELs, we applied a single mesa multi‐aperture (MA) single‐mode (SM) VCSEL design. The design is based on 4 diamond‐shaped apertures at ∼10 µm pitch and an effective diameter of a single aperture of ∼1.7‐2 µm. Higher capacitance of the large VCSEL mesa is compensated by a reduced resistance (50Ω) of the device, allowing optical bandwidth f ‐3dBo ∼32 GHz. The intrinsic optical bandwidth f ‐3dBo of ∼45 GHz is extracted. MA SM VCSEL allows narrow spectral width and error‐free 50‐Gbaud data transmission over 200 m OM5 multimode fibre (MMF).

Electronics LettersVol. 61(1)
Warsaw University of Technology (PL), Vertically Integrated Systems (Germany) (DE)
Australian Government, Bundesministerium für Bildung und Forschung
Openalex Percentile: Top 95%
Semiconductor Lasers and Optical Devices
AI Navigator

Ask Laika to Summarize, Analyze, and Connect papers live on the map.

Summarize Papers & Methodologies

Extract key findings, datasets, and comparative methods across publications.

Benchmark Rankings & Visual Analytics

Rank top research institutions, authors, funders, topics, and journals by Field-Weighted Citation Impact (FWCI) and paper volume with instant charts.

Connect Distant Disciplines

Bridge topological clusters on the map to find hidden collaborative intersections.