Exploring Chemical Catalytic Mechanisms for Enhancing Bonding Energy in Direct Silicon Dioxide Wafer Bonding
The influence of pH on silicon dioxide direct bonding is studied, unveiling its role in bonding energy enhancement. We show that the deposition of basic salt or molecules consistently increases the silicon dioxide adherence energy. The underlying mechanisms, including silica hydrolysis and catalysis of siloxane bond formation, are explored. The results offer valuable insights into optimized direct bonding processes for microelectronics and related applications.
Authors
- F. Rieutord (ORCID: https://orcid.org/0000-0003-4697-3652)
- Aziliz Calvez (ORCID: https://orcid.org/0000-0003-4211-5095)
- Frank Fournel (ORCID: https://orcid.org/0000-0001-6051-3391)
- Vincent Larrey (ORCID: https://orcid.org/0000-0002-1736-0104)
- P. Noël (ORCID: https://orcid.org/0009-0002-0658-1849)
Institutions
- Soitec (France) (FR)
- Commissariat à l'Énergie Atomique et aux Énergies Alternatives (FR)
- CEA Grenoble (FR)
- Laboratoire d'Électronique des Technologies de l'Information (FR)
- Université Grenoble Alpes (FR)
Publication Details
- Journal
- Applied Sciences
- Published
- 2025-04-02
- DOI
- https://doi.org/10.3390/app15073883
- Citations
- 2
- Primary Topic
- 3D IC and TSV technologies
- Type
- article
- Field-Weighted Citation Impact
- 1.46