Testbeam characterization of a SiGe BiCMOS monolithic silicon pixel detector with internal gain layer

Abstract A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μm pitch, read by low-noise, high-speed front-end electronics built using 130 nm SiGe BiCMOS technology. It includes the PicoAD sensor, which employs a continuous, deep PN junction to generate avalanche gain. Data were taken across power densities from 0.05 to 2.6 W/cm 2 and sensor bias voltages from 90 to 180 V. At the highest bias voltage, corresponding to an electron gain of 50, and maximum power density, an efficiency of (99.99 ± 0.01)% was achieved. The time resolution at this working point was (23.9 ± 0.2) ps before time-walk correction, improving to (12.1 ± 0.3) ps after correction.

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Publication Details

Journal
Journal of Instrumentation
Published
2025-04-01
DOI
https://doi.org/10.1088/1748-0221/20/04/p04001
Citations
1
Primary Topic
Particle Detector Development and Performance
Type
article
Field-Weighted Citation Impact
1.87

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article

Testbeam characterization of a SiGe BiCMOS monolithic silicon pixel detector with internal gain layer

A. Pizarro-Medina, Carlo Alberto Fenoglio, F. Cadoux, J. Saidi et al.
1 citations
Journal of Instrumentation
Particle Detector Development and Performance
1.87
article

Testbeam characterization of a SiGe BiCMOS monolithic silicon pixel detector with internal gain layer

A. Pizarro-Medina, Carlo Alberto Fenoglio, F. Cadoux, J. Saidi, A. Picardi, R. Cardella, H. Rücker, M. Elviretti, L. Cecconi, S. Gonzalez-Sevilla, T. Kugathasan, C. Magliocca, M. Milanesio, R. Kotitsa, R. Cardarelli, L. Iodice, T. Moretti, D. Ferrère, G. Iacobucci, L. Paolozzi, M. Nessi, Y. Favre, M. Vicente Barreto Pinto, S. Débieux, S. Zambito
article en
1 citations

Abstract

Abstract A monolithic silicon pixel ASIC prototype, produced in 2024 as part of the Horizon 2020 MONOLITH ERC Advanced project, was tested with a 120 GeV/c pion beam. The ASIC features a matrix of hexagonal pixels with a 100 μm pitch, read by low-noise, high-speed front-end electronics built using 130 nm SiGe BiCMOS technology. It includes the PicoAD sensor, which employs a continuous, deep PN junction to generate avalanche gain. Data were taken across power densities from 0.05 to 2.6 W/cm 2 and sensor bias voltages from 90 to 180 V. At the highest bias voltage, corresponding to an electron gain of 50, and maximum power density, an efficiency of (99.99 ± 0.01)% was achieved. The time resolution at this working point was (23.9 ± 0.2) ps before time-walk correction, improving to (12.1 ± 0.3) ps after correction.

Journal of InstrumentationVol. 20(04)
University of Geneva (CH), European Organization for Nuclear Research (CH), Leibniz Institute for High Performance Microelectronics (DE)
CERN, Université de Genève
Openalex Percentile: Top 15%
Particle Detector Development and Performance
1.87
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