Negative Capacitance and Dirac Source Hybrid Technique MoS<sub>2</sub> Field‐Effect Transistors with Enhanced On‐State Current

This work experimentally demonstrates a novel molybdenum disulfide (MoS 2 ) field‐effect transistor (FET) based on negative capacitance (NC) and Dirac source (DS) hybrid technique. The synergistic mechanism enhances both carrier transport and gate control, enabling a steep slope and significantly increased on‐state current. By this design, this NCDS FET achieves ultrahigh on‐state current of 100 μA, low average subthreshold swing (SS) of 60.3 mV dec −1 over approximately two orders of magnitude in I DS and minimum 6 mV hysteresis. Notably, the device demonstrates 89% current enhancement compared to conventional DS FETs at V DS = 1 V. Besides, this device exhibits no sweeping‐speed dependence, demonstrating excellent stability. The combination of high current density, steep‐slope switching, and robust stability demonstrates that this novel device architecture is a promising candidate for next‐generation ultralow‐power logic electronics.

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Publication Details

Journal
physica status solidi (RRL) - Rapid Research Letters
Published
2025-04-01
DOI
https://doi.org/10.1002/pssr.202500064
Primary Topic
Ferroelectric and Negative Capacitance Devices
Type
article
Field-Weighted Citation Impact
0.00

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Negative Capacitance and Dirac Source Hybrid Technique MoS2 Field‐Effect Transistors with Enhanced On‐State Current

Wendong Lu, K. Chen, Di Geng, Congyan Lu et al.
physica status solidi (RRL) - Rapid Research Letters
Ferroelectric and Negative Capacitance Devices
article

Negative Capacitance and Dirac Source Hybrid Technique MoS2 Field‐Effect Transistors with Enhanced On‐State Current

Wendong Lu, K. Chen, Di Geng, Congyan Lu, Weizhuo Gan, Zhenhua Wu, Xuanming Zhang, Fuxi Liao, Nannan Mao, Jiawei Wang, Menggan Liu, Lingling Wang, Ling Li, Zihan Li, Nianduan Lu, Jiebin Niu
article en

Abstract

This work experimentally demonstrates a novel molybdenum disulfide (MoS 2 ) field‐effect transistor (FET) based on negative capacitance (NC) and Dirac source (DS) hybrid technique. The synergistic mechanism enhances both carrier transport and gate control, enabling a steep slope and significantly increased on‐state current. By this design, this NCDS FET achieves ultrahigh on‐state current of 100 μA, low average subthreshold swing (SS) of 60.3 mV dec −1 over approximately two orders of magnitude in I DS and minimum 6 mV hysteresis. Notably, the device demonstrates 89% current enhancement compared to conventional DS FETs at V DS = 1 V. Besides, this device exhibits no sweeping‐speed dependence, demonstrating excellent stability. The combination of high current density, steep‐slope switching, and robust stability demonstrates that this novel device architecture is a promising candidate for next‐generation ultralow‐power logic electronics.

physica status solidi (RRL) - Rapid Research LettersVol. 19(6)
Chinese Academy of Sciences (CN), Institute of Microelectronics (CN), University of Chinese Academy of Sciences (CN)
Youth Innovation Promotion Association
Openalex Percentile: Top 95%
Ferroelectric and Negative Capacitance Devices
DOIOpen Access PDFOpenAlex
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