Improving the memory window of a ferroelectric thin film transistor using an atomic layer deposited HfN<sub><i>x</i></sub> interfacial layer
This work examines the impact of atomic-layer-deposited 1-nm-thick HfN x interfacial layer and NH 3 annealing on the ferroelectric properties of Hf 0.5 Zr 0.5 O 2 capacitors and ferroelectric thin-film transistors with an amorphous InGaZnO channel.
Authors
- Kyung Do Kim (ORCID: https://orcid.org/0000-0001-5296-2349)
- Seung Gyu Ryoo
- Cheol Seong Hwang (ORCID: https://orcid.org/0000-0002-6254-9758)
- Seong Jae Shin
- Kun Hee Ye (ORCID: https://orcid.org/0000-0003-4953-2983)
- Jae Hee Song (ORCID: https://orcid.org/0000-0002-6716-5681)
- Seung Yong Byun
- Jae Hoon Lee (ORCID: https://orcid.org/0009-0009-4182-8529)
- Hyun Woo Nam
- In Soo Lee (ORCID: https://orcid.org/0000-0003-4299-7227)
- Suk Hyun Lee
- Jung‐Hae Choi
Institutions
- SK Group (South Korea) (KR)
- Seoul National University (KR)
- Korea Institute of Science and Technology (KR)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc00453e
- Citations
- 4
- Primary Topic
- Ferroelectric and Negative Capacitance Devices
- Type
- article
- Field-Weighted Citation Impact
- 2.92
Funders
- National Research Foundation
- National Research Foundation of Korea