On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs

In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate. Transistors and npn diode test structures were characterized electrically as well as by SEM and by AFM, which results compared to CAD simulations. We demonstrate that while Mg reactivation is a high-temperature process that enhances the ability to block high voltages, it also introduces killer defects that can degenerate structures. Additionally, we observed that the leakage current at the edges of the mesa has minimal significance. The findings highlight that substrate quality is a crucial factor in preventing killer defect formation and likely in minimizing leakage current at the npn epitaxial stack and off-current in transistor devices.

Authors

Publication Details

Journal
Power Electronic Devices and Components
Published
2025-04-01
DOI
https://doi.org/10.1016/j.pedc.2025.100086
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
1.26

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article

On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs

R. Kruszka, I. Grzegory, Kamil Kosiel, Ernest Brzozowski et al.
1 citations
Power Electronic Devices and Components
GaN-based semiconductor devices and materials
1.26
article

On the origin of off-state leakage current in n-p-n vertical structures for GaN-based trench-MOSFETs

R. Kruszka, I. Grzegory, Kamil Kosiel, Ernest Brzozowski, Pawel Prystawko, Andrzej Taube, Anna Szerling, Oskar Sadowski, Joanna Jankowska‐Śliwińska, Michał Boćkowski, Jarosław Tarenko, K. Król, I. Jóźwik, Kamil Abendroth, Justyna Wierzbicka, Maciej Kamiński, Aneta Gołębiowska, Aleksander Szczepański, Krzysztof Urbanowski
article en
1 citations

Abstract

In this work, we present the results of research on the off-current mechanism in vertical trench MOS devices manufactured on an ammonothermal substrate. Transistors and npn diode test structures were characterized electrically as well as by SEM and by AFM, which results compared to CAD simulations. We demonstrate that while Mg reactivation is a high-temperature process that enhances the ability to block high voltages, it also introduces killer defects that can degenerate structures. Additionally, we observed that the leakage current at the edges of the mesa has minimal significance. The findings highlight that substrate quality is a crucial factor in preventing killer defect formation and likely in minimizing leakage current at the npn epitaxial stack and off-current in transistor devices.

Power Electronic Devices and ComponentsVol. 11
Narodowe Centrum Badań i Rozwoju
Openalex Percentile: Top 23%
GaN-based semiconductor devices and materials
1.26
DOIOpen Access PDFOpenAlex
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