Investigation of the Microstructural and Dielectric Properties of Strontium Doped Calcium Copper Titanate Electroceramics

The conventional solid-state reaction method was used to produce CaSrCu<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> Ti<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</inf> O<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</inf> (CSCTO) ceramics. The investigation focused on examining the microstructure and dielectric properties of polycrystalline CSCTO sample that were subjected to sintering at $1080^{\circ} \mathrm{C}$. Abnormal grain growth was observed in the CSCTO sample through field emission scanning electron microscopy (FESEM), and the grain size was calculated and found to be approximately $5.466 \mu \mathrm{~m}$ using ImageJ software. The dielectric constant of the prepared sample exhibited significant frequency dependence within the frequency range of 40 Hz to 110 MHz. At room temperature and a frequency of $\mathbf{4 0}$ Hz, the measured dielectric constant yielded a value of 18000. The dielectric loss is close to 1.3. Also, the imaginary impedance increases with the increasing frequency. Nyquist plot also provides the resistance behavior of the prepared ceramics.